We appreciate your interest in our selection of parts that fall under the NSN 5962-01-464-3420. Below, top-requested part numbers like 22V10-25 BLA, GAL22V10D-25LD 833C, 5962-8984104LA, ROM PROM HEAD 238, 5962-89841, and others are presented alongside their manufacturer for your perusal. In order to receive pricing options on any featured NSN 5962-01-464-3420, simply click on the “RFQ” button next to it and complete the quote request form you are directed to. Be sure to include as many details as you can about your requirements and restrictions alike so our team can best formulate ideal fulfillment options for your consideration.
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| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-464-3420 (014643420) |
| NCB Code | USA (01) |
| Manufacturer | E2v Inc, Lattice Semiconductor Corp, Dla Land And Maritime, Cypress Semiconductor Inc |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 22V10-25 BLA | e2v inc | microcircuit memory | RFQ |
| GAL22V10D-25LD 833C | lattice semiconductor corp | microcircuit memory | RFQ |
| 5962-8984104LA | dla land and maritime | microcircuit memory | RFQ |
| ROM PROM HEAD 238 | dla land and maritime | microcircuit memory | RFQ |
| 5962-89841 | dla land and maritime | microcircuit memory | RFQ |
| 5962-8984104LB | dla land and maritime | microcircuit memory | RFQ |
| 5962-8984104LX | dla land and maritime | microcircuit memory | RFQ |
| PALCE22V10-25DMB | cypress semiconductor inc | microcircuit memory | RFQ |
| GAL22V10C-25LD 883C | lattice semiconductor corp | microcircuit memory | RFQ |
| PALC22V10D-25DMB | cypress semiconductor inc | microcircuit memory | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.5 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | F-15E ACFT; F-18 ACFT |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND ELECTROSTATIC SENSITIVE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS EE PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT |
| CZEQ | TIME RATING PER CHACTERISTIC | 25.00 NANOSECONDS NOMINAL ACCESS |
| CZER | MEMORY DEVICE TYPE | PAL |
| FEAT | SPECIAL FEATURES | RECOMMENDED OPERATING SUPPLY VOLTAGE (VCC) 4.5 TO 5.5 VDC; CASE OUTLINE DESCRIPTIVE DESIGNATOR MIL-STD-1835, GDIP3-T24 OR CDIP4-T24 |
| SUPP | SUPPLEMENTARY FEATURES | 22-INPUT, 10-OUTPUT, EE CMOS, ARCHITECTURALLY GENERIC, PROGRAMMABLE AND-OR ARRAY |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| Relevant Components for NSN - 5962-01-464-3420, 5962014643420 | ||||
| 5935-01-293-3127 (5935012933127) | 5999-00-437-6049 (5999004376049) | 5998-01-344-5832 (5998013445832) | 5910-01-060-9297 (5910010609297) | |
| 5950-01-023-5955 (5950010235955) | 5935-00-564-1316 (5935005641316) | 5950-00-600-0785 (5950006000785) | 5935-01-447-1650 (5935014471650) | |
| 5995-01-271-2563 (5995012712563) | 5910-00-644-6161 (5910006446161) | 5910-00-064-4702 (5910000644702) | 5950-01-441-4266 (5950014414266) | |
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