We appreciate your interest in our selection of parts that fall under the NSN 5962-01-372-1262. Below, top-requested part numbers like 5962-8866203NA, 15-1326285-1, NH15-1326285-1, and others are presented alongside their manufacturer for your perusal. In order to receive pricing options on any featured NSN 5962-01-372-1262, simply click on the “RFQ” button next to it and complete the quote request form you are directed to. Be sure to include as many details as you can about your requirements and restrictions alike so our team can best formulate ideal fulfillment options for your consideration.
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Item Name | Microcircuit Memory |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
National Item Identification Number (NIIN) | 01-372-1262 (013721262) |
NCB Code | USA (01) |
Manufacturer | Cypress Semiconductor Inc, Gte Government Systems Corp, General Dynamics Mission Systems, Dla Land And Maritime |
Part Number | Manufacturer | Item Name | RFQ |
---|---|---|---|
5962-8866203NA | cypress semiconductor inc | microcircuit memory | RFQ |
15-1326285-1 | gte government systems corp | microcircuit memory | RFQ |
15-1326285-1 | general dynamics mission systems | microcircuit memory | RFQ |
NH15-1326285-1 | dla land and maritime | microcircuit memory | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | RADIATION HARDENED AND ELECTROSTATIC SENSITIVE |
CRTL | CRITICALITY CODE JUSTIFICATION | FEAT |
CZEQ | TIME RATING PER CHACTERISTIC | 55.00 NANOSECONDS NOMINAL ACCESS |
ZZZX | DEPARTURE FROM CITED DESIGNATOR | MODIFIED FOR NUCLEAR HARDNESS IMPACT |
AGAV | END ITEM IDENTIFICATION | HAC/RMPE REAC E/I FSCM 11293 |
ZZZP | PURCHASE DESCRIPTION IDENTIFICATION | 11293-15-1326285-1 |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 6.0 VOLTS MAXIMUM INPUT |
CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC |
FEAT | SPECIAL FEATURES | CBBL |
NHCF | NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
ZZZK | SPECIFICATION/STANDARD DATA | 67268-5962-8866203UA GOVERNMENT STANDARD |
AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
CQSZ | INCLOSURE CONFIGURATION | LEADED CHIP CARRIER |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | C-11 MIL-M-38510 |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT,SRAM,32K X 8(CY7C197) |
CZER | MEMORY DEVICE TYPE | RAM |
CZZZ | MEMORY CAPACITY | 128KX8 |
Relevant Components for NSN - 5962-01-372-1262, 5962013721262 | ||||
5975-01-488-1039 (5975014881039) | 5905-00-280-1812 (5905002801812) | 5975-00-073-4207 (5975000734207) | 5905-01-127-2056 (5905011272056) | |
5930-01-455-1402 (5930014551402) | 5905-01-261-3683 (5905012613683) | 5998-01-177-7709 (5998011777709) | 5998-01-217-6701 (5998012176701) | |
5940-01-064-0053 (5940010640053) | 5998-01-529-8918 (5998015298918) | 5935-01-479-6289 (5935014796289) | 5905-01-320-8479 (5905013208479) | |
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