We appreciate your interest in our selection of parts that fall under the NSN 5962-01-102-3846. Below, top-requested part numbers like ROM PROM HEAD 026, D3624, 4004785-08, DM54S474J, IM5625-CJG, and others are presented alongside their manufacturer for your perusal. In order to receive pricing options on any featured NSN 5962-01-102-3846, simply click on the “RFQ” button next to it and complete the quote request form you are directed to. Be sure to include as many details as you can about your requirements and restrictions alike so our team can best formulate ideal fulfillment options for your consideration.
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| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-102-3846 (011023846) |
| NCB Code | USA (01) |
| Manufacturer | Dla Land And Maritime, Intel Corporation, Raytheon Technical Services Company, National Semiconductor Corporation, Intersil Corporation, Lansdale Semiconductor Inc, General Dynamics Information Systems, Mmi Amd, Military Specifications, Boeing Company The, Fairchild Semiconductor Corp, E2v Inc, Raven Electronics Corporation, Lockheed Martin Corporation, Advanced Micro Devices Inc, Bae Systems Inc, Philips Semiconductors Ltd, Northrop Grumman Systems Corporation |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| ROM PROM HEAD 026 | dla land and maritime | microcircuit memory | RFQ |
| D3624 | intel corporation | microcircuit memory | RFQ |
| 4004785-08 | raytheon technical services company | microcircuit memory | RFQ |
| DM54S474J | national semiconductor corporation | microcircuit memory | RFQ |
| IM5625-CJG | intersil corporation | microcircuit memory | RFQ |
| SL82S141 BJA | lansdale semiconductor inc | microcircuit memory | RFQ |
| 85694600-03 | general dynamics information systems | microcircuit memory | RFQ |
| 6341-1J | mmi amd | microcircuit memory | RFQ |
| MIL-M-38510/208 | military specifications | microcircuit memory | RFQ |
| HM1-7641-5 | intersil corporation | microcircuit memory | RFQ |
| 5962-3820802BJX | military specifications | microcircuit memory | RFQ |
| 477-1336-031 | boeing company the | microcircuit memory | RFQ |
| 583R350H01 | fairchild semiconductor corp | microcircuit memory | RFQ |
| JM38510/20802BJX | military specifications | microcircuit memory | RFQ |
| DM54S474J MIL | national semiconductor corporation | microcircuit memory | RFQ |
| 82S141 BJA | e2v inc | microcircuit memory | RFQ |
| H201-3624-04 | raven electronics corporation | microcircuit memory | RFQ |
| 5962-3820802BJB | military specifications | microcircuit memory | RFQ |
| 7849878P001 | lockheed martin corporation | microcircuit memory | RFQ |
| M38510/20802BJB | military specifications | microcircuit memory | RFQ |
| 477-1768-003 | boeing company the | microcircuit memory | RFQ |
| AMD9214DM | advanced micro devices inc | microcircuit memory | RFQ |
| 9402-00129 | bae systems inc | microcircuit memory | RFQ |
| 4004785-01 | raytheon technical services company | microcircuit memory | RFQ |
| S82S141I 883B | philips semiconductors ltd | microcircuit memory | RFQ |
| N82S141F | philips semiconductors ltd | microcircuit memory | RFQ |
| M38510/20802BJA | military specifications | microcircuit memory | RFQ |
| 1004487-01 | raytheon technical services company | microcircuit memory | RFQ |
| M38510/20802BJ | military specifications | microcircuit memory | RFQ |
| 5962-3820802BJA | military specifications | microcircuit memory | RFQ |
| 583R350H01 | northrop grumman systems corporation | microcircuit memory | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.02 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND SCHOTTKY AND BIPOLAR AND PROGRAMMABLE AND POSITIVE OUTPUTS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 13 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/208/USAF/ GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5962-01-102-3846, 5962011023846 | ||||
| 5935-01-393-9456 (5935013939456) | 5995-01-130-0424 (5995011300424) | 5905-01-026-0713 (5905010260713) | 5905-01-081-8903 (5905010818903) | |
| 5999-00-307-3125 (5999003073125) | 5995-01-119-5176 (5995011195176) | 5950-00-147-1400 (5950001471400) | 5985-01-027-3311 (5985010273311) | |
| 5965-01-661-1950 (5965016611950) | 5985-01-045-7409 (5985010457409) | 5930-01-630-3448 (5930016303448) | 5935-00-242-1833 (5935002421833) | |
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