We appreciate your interest in our selection of parts that fall under the NSN 5962-01-093-6160. Below, top-requested part numbers like AM27S291ADC, D3636B1, AM27S191DCB, 5962-3821002BJX, R29683ASMB, and others are presented alongside their manufacturer for your perusal. In order to receive pricing options on any featured NSN 5962-01-093-6160, simply click on the “RFQ” button next to it and complete the quote request form you are directed to. Be sure to include as many details as you can about your requirements and restrictions alike so our team can best formulate ideal fulfillment options for your consideration.
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| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-093-6160 (010936160) |
| NCB Code | USA (01) |
| Manufacturer | Advanced Micro Devices Inc, Intel Corporation, Military Specifications, Fairchild Semiconductor Corp, Boeing Company The, Lockheed Martin Corporation, Philips Semiconductors Ltd, Dla Land And Maritime, International Electric Co, National Semiconductor Corporation, Thales Sa, Hamilton Sundstrand Corporation, Raytheon Company |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| AM27S291ADC | advanced micro devices inc | microcircuit memory | RFQ |
| D3636B1 | intel corporation | microcircuit memory | RFQ |
| AM27S191DCB | advanced micro devices inc | microcircuit memory | RFQ |
| 5962-3821002BJX | military specifications | microcircuit memory | RFQ |
| R29683ASMB | fairchild semiconductor corp | microcircuit memory | RFQ |
| R29681SMB | fairchild semiconductor corp | microcircuit memory | RFQ |
| 000-8003-983 | boeing company the | microcircuit memory | RFQ |
| 7907566-02 | lockheed martin corporation | microcircuit memory | RFQ |
| MIL-M-38510/210 | military specifications | microcircuit memory | RFQ |
| N82S191N | philips semiconductors ltd | microcircuit memory | RFQ |
| 5962-3821002BJB | military specifications | microcircuit memory | RFQ |
| AM27S191APC | advanced micro devices inc | microcircuit memory | RFQ |
| 7909151-06 | lockheed martin corporation | microcircuit memory | RFQ |
| 5962-3821002BJA | military specifications | microcircuit memory | RFQ |
| 82S191 | philips semiconductors ltd | microcircuit memory | RFQ |
| HM1-76161-5 | advanced micro devices inc | microcircuit memory | RFQ |
| ROM PROM HEAD 029 | dla land and maritime | microcircuit memory | RFQ |
| M3636B-1 | intel corporation | microcircuit memory | RFQ |
| 3636B-1 | intel corporation | microcircuit memory | RFQ |
| 7908628-06 | lockheed martin corporation | microcircuit memory | RFQ |
| M38510/21002BJX | military specifications | microcircuit memory | RFQ |
| MD3636 | international electric co | microcircuit memory | RFQ |
| DM77S191J 883B | national semiconductor corporation | microcircuit memory | RFQ |
| S82S191I 883B | philips semiconductors ltd | microcircuit memory | RFQ |
| JAN-M38510/21002BJX | military specifications | microcircuit memory | RFQ |
| 99116292 | thales sa | microcircuit memory | RFQ |
| 5E8971 344-0014 | hamilton sundstrand corporation | microcircuit memory | RFQ |
| 477-1690-001 | boeing company the | microcircuit memory | RFQ |
| R29681ASMB | fairchild semiconductor corp | microcircuit memory | RFQ |
| M38510/21002BJB | military specifications | microcircuit memory | RFQ |
| M38510/21002BJA | military specifications | microcircuit memory | RFQ |
| JM38510/21002BJX | military specifications | microcircuit memory | RFQ |
| G134663-2 | raytheon company | microcircuit memory | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.02 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIPOLAR AND PROGRAMMABLE AND PROGRAMMED AND SCHOTTKY AND W/BUFFERED OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/21 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5962-01-093-6160, 5962010936160 | ||||
| 5935-01-666-8644 (5935016668644) | 5975-01-685-2912 (5975016852912) | 5935-01-627-9337 (5935016279337) | 5935-01-591-6093 (5935015916093) | |
| 5935-01-227-1535 (5935012271535) | 5998-00-422-0779 (5998004220779) | 5998-01-362-4250 (5998013624250) | 5930-01-009-0231 (5930010090231) | |
| 5910-01-574-9147 (5910015749147) | 5950-01-350-8713 (5950013508713) | 5935-01-028-3658 (5935010283658) | 5998-01-185-1571 (5998011851571) | |
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