We appreciate your interest in our selection of parts that fall under the NSN 5962-01-078-7029. Below, top-requested part numbers like IM5623, JAN-M38510/20302BEX, 722901-50, 5E8071 149A, 5962-3820302BEB, and others are presented alongside their manufacturer for your perusal. In order to receive pricing options on any featured NSN 5962-01-078-7029, simply click on the “RFQ” button next to it and complete the quote request form you are directed to. Be sure to include as many details as you can about your requirements and restrictions alike so our team can best formulate ideal fulfillment options for your consideration.
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Item Name | Microcircuit Memory |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
National Item Identification Number (NIIN) | 01-078-7029 (010787029) |
NCB Code | USA (01) |
Manufacturer | Intersil Corporation, Military Specifications, Raytheon Company, Hamilton Sundstrand Corporation, Philips Semiconductors Ltd, Bae Systems Inc, Northrop Grumman Corporation, Eaton Corporation, Harris Corporation, Boeing Company The, Rockwell Collins Aerospace, Northrop Grumman Systems Corporation, Mmi Amd, Thermo Electron North America Llc |
Part Number | Manufacturer | Item Name | RFQ |
---|---|---|---|
IM5623 | intersil corporation | microcircuit memory | RFQ |
JAN-M38510/20302BEX | military specifications | microcircuit memory | RFQ |
722901-50 | raytheon company | microcircuit memory | RFQ |
5E8071 149A | hamilton sundstrand corporation | microcircuit memory | RFQ |
5962-3820302BEB | military specifications | microcircuit memory | RFQ |
CC5146 | philips semiconductors ltd | microcircuit memory | RFQ |
912351-1 | bae systems inc | microcircuit memory | RFQ |
CM0115-703 | northrop grumman corporation | microcircuit memory | RFQ |
540723 | intersil corporation | microcircuit memory | RFQ |
293510 | eaton corporation | microcircuit memory | RFQ |
HMI7611 | harris corporation | microcircuit memory | RFQ |
HMI-7611A-2 | harris corporation | microcircuit memory | RFQ |
HM7611 | intersil corporation | microcircuit memory | RFQ |
56S821 | intersil corporation | microcircuit memory | RFQ |
477-1408-002 | boeing company the | microcircuit memory | RFQ |
M38510/20302BEB | military specifications | microcircuit memory | RFQ |
M38510/20302BEX | military specifications | microcircuit memory | RFQ |
EL127901 | northrop grumman corporation | microcircuit memory | RFQ |
202798-006 | bae systems inc | microcircuit memory | RFQ |
M38510-20302BEC | military specifications | microcircuit memory | RFQ |
MIL-M-38510/203 | military specifications | microcircuit memory | RFQ |
PC73532-1 | rockwell collins aerospace | microcircuit memory | RFQ |
48-050418-02 | northrop grumman systems corporation | microcircuit memory | RFQ |
SM1212 | mmi amd | microcircuit memory | RFQ |
5962-3820302BEX | military specifications | microcircuit memory | RFQ |
113-0035-003 | thermo electron north america llc | microcircuit memory | RFQ |
N82S129 | philips semiconductors ltd | microcircuit memory | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 739.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | 55.0/125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | PROGRAMMABLE |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
CRTL | CRITICALITY CODE JUSTIFICATION | FEAT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | ROM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
FEAT | SPECIAL FEATURES | STATIC ELECTRICITY SENSTIVE |
TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/203 GOVERNMENT SPECIFICATION |
Relevant Components for NSN - 5962-01-078-7029, 5962010787029 | ||||
5999-00-616-9061 (5999006169061) | 5950-01-131-6873 (5950011316873) | 5910-01-260-0836 (5910012600836) | 5905-00-819-6428 (5905008196428) | |
5998-00-226-2295 (5998002262295) | 5935-00-201-7480 (5935002017480) | 5950-01-057-5614 (5950010575614) | 5985-01-291-9953 (5985012919953) | |
5999-01-138-1861 (5999011381861) | 5910-00-817-5620 (5910008175620) | 5961-00-810-3955 (5961008103955) | 5935-01-216-0330 (5935012160330) | |
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