We appreciate your interest in our selection of parts that fall under the NSN 5961-01-099-9148. Below, top-requested part numbers like 353-3625-011, 1N825, TS825F, JAN1N825, K3919, and others are presented alongside their manufacturer for your perusal. In order to receive pricing options on any featured NSN 5961-01-099-9148, simply click on the “RFQ” button next to it and complete the quote request form you are directed to. Be sure to include as many details as you can about your requirements and restrictions alike so our team can best formulate ideal fulfillment options for your consideration.
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Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 01-099-9148 (010999148) |
NCB Code | USA (01) |
Manufacturer | Trw Electronic Components, Microsemi Corporation, Gilbert Engineering Co Inc, Freescale Semiconductor Inc, Leonardo Mw Ltd, Bae Systems Inc, Power Designs Inc, Joint Army-Navy Specifications, Military Specifications, Northrop Grumman Systems Corporation, Rockwell Collins Aerospace, Superior Electric Holding Group Llc, Wayne Kerr Electronics Inc, Inspektorat Wsparcia Sil Zbrojnych, C O D I Corp, Ampex Data Systems Corporation |
Part Number | Manufacturer | Item Name | RFQ |
---|---|---|---|
353-3625-011 | trw electronic components | semiconductor device diode | RFQ |
1N825 | microsemi corporation | semiconductor device diode | RFQ |
TS825F | gilbert engineering co inc | semiconductor device diode | RFQ |
JAN1N825 | freescale semiconductor inc | semiconductor device diode | RFQ |
K3919 | leonardo mw ltd | semiconductor device diode | RFQ |
TS825G1 | gilbert engineering co inc | semiconductor device diode | RFQ |
K5057 | bae systems inc | semiconductor device diode | RFQ |
B65533-6 | power designs inc | semiconductor device diode | RFQ |
1N825 | joint army-navy specifications | semiconductor device diode | RFQ |
MIL-PRF-19500/159 | military specifications | semiconductor device diode | RFQ |
1N825A | microsemi corporation | semiconductor device diode | RFQ |
1N825 | freescale semiconductor inc | semiconductor device diode | RFQ |
1081H28H19 | northrop grumman systems corporation | semiconductor device diode | RFQ |
JANTX1N825-1 | military specifications | semiconductor device diode | RFQ |
353-3625-011 | rockwell collins aerospace | semiconductor device diode | RFQ |
JANTX1NB25-1 | military specifications | semiconductor device diode | RFQ |
JANTX1N825 | military specifications | semiconductor device diode | RFQ |
202642 PC 108 | superior electric holding group llc | semiconductor device diode | RFQ |
DZ16V20D3 | wayne kerr electronics inc | semiconductor device diode | RFQ |
QPL-JAN1N825 | military specifications | semiconductor device diode | RFQ |
B65533-7-1 | power designs inc | semiconductor device diode | RFQ |
5961PL0911105 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | RFQ |
353-3625-011 | c o d i corp | semiconductor device diode | RFQ |
1081H30H16 | northrop grumman systems corporation | semiconductor device diode | RFQ |
1N825 | gilbert engineering co inc | semiconductor device diode | RFQ |
B65533-7A | power designs inc | semiconductor device diode | RFQ |
013-202 | ampex data systems corporation | semiconductor device diode | RFQ |
201670 PC 108 | superior electric holding group llc | semiconductor device diode | RFQ |
IN 825 | military specifications | semiconductor device diode | RFQ |
353-9016-110 | rockwell collins aerospace | semiconductor device diode | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
ADAV | OVERALL DIAMETER | 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
AFZC | FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
AXGY | MOUNTING METHOD | TERMINAL |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE |
CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 70.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
MATT | MATERIAL | GLASS INCLOSURE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLEC |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-PRF-19500/159 GOVERNMENT SPECIFICATION |
Relevant Components for NSN - 5961-01-099-9148, 5961010999148 | ||||
5935-01-293-3127 (5935012933127) | 5999-00-437-6049 (5999004376049) | 5998-01-344-5832 (5998013445832) | 5910-01-060-9297 (5910010609297) | |
5950-01-023-5955 (5950010235955) | 5935-00-564-1316 (5935005641316) | 5950-00-600-0785 (5950006000785) | 5935-01-447-1650 (5935014471650) | |
5995-01-271-2563 (5995012712563) | 5910-00-644-6161 (5910006446161) | 5910-00-064-4702 (5910000644702) | 5950-01-441-4266 (5950014414266) | |
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