We appreciate your interest in our selection of parts that fall under the NSN 5961-00-878-2737. Below, top-requested part numbers like 1N255A, VBE890-1N1126A, 1N1126, 451634-3, 16101-002, and others are presented alongside their manufacturer for your perusal. In order to receive pricing options on any featured NSN 5961-00-878-2737, simply click on the “RFQ” button next to it and complete the quote request form you are directed to. Be sure to include as many details as you can about your requirements and restrictions alike so our team can best formulate ideal fulfillment options for your consideration.
Owned and operated by the NSN parts supplier ASAP Semiconductor, National Stock Numbers Quotes is only stocked with items that meet strict regulatory and statutory guidelines for export compliance and quality assurance. Moreover, all NSN 5961-00-878-2737 items on this page are sourced from leading manufacturers that we trust and have vetted as necessary. Aside from this steadfast commitment, we also aim to address the unique constraints of customers wherever possible, even if other channels have failed to. If you have any further questions about the services we offer or wish to discuss your needs directly, our representatives are always just a call or email away from assisting you!
Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 00-878-2737 (008782737) |
NCB Code | USA (00) |
Manufacturer | Texas Instruments Inc, Thales Nederland Bv, Military Specifications, General Electric Company, Dynalec Corporation, Honeywell International Inc, General Instrument Corporation, Schuessler William, Army United States Department Of The, Fmc Technologies Inc, The Dewey Electronics Corporation, Raytheon Company, Electronic Transistors Corp, Harris Corporation, Joint Army-Navy Specifications, Inspektorat Wsparcia Sil Zbrojnych, Air Force-Navy Aeronautical, Gilbert Engineering Co Inc |
Part Number | Manufacturer | Item Name | RFQ |
---|---|---|---|
1N255A | texas instruments inc | semiconductor device diode | RFQ |
VBE890-1N1126A | thales nederland bv | semiconductor device diode | RFQ |
1N1126 | military specifications | semiconductor device diode | RFQ |
451634-3 | general electric company | semiconductor device diode | RFQ |
16101-002 | dynalec corporation | semiconductor device diode | RFQ |
451634-3 | honeywell international inc | semiconductor device diode | RFQ |
451634-3 | general instrument corporation | semiconductor device diode | RFQ |
1N1117 | schuessler william | semiconductor device diode | RFQ |
9026811 | army united states department of the | semiconductor device diode | RFQ |
S2030 | fmc technologies inc | semiconductor device diode | RFQ |
50180-70 | the dewey electronics corporation | semiconductor device diode | RFQ |
4178600-179 | raytheon company | semiconductor device diode | RFQ |
1N1125 | electronic transistors corp | semiconductor device diode | RFQ |
A1047479-3 | harris corporation | semiconductor device diode | RFQ |
MIL-S-19500/104 | military specifications | semiconductor device diode | RFQ |
1N1126A | joint army-navy specifications | semiconductor device diode | RFQ |
JAN1N1126A | joint army-navy specifications | semiconductor device diode | RFQ |
JAN1N1125 | military specifications | semiconductor device diode | RFQ |
44B250191-003 | general electric company | semiconductor device diode | RFQ |
5961PL1277837 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | RFQ |
1N1126A | air force-navy aeronautical | semiconductor device diode | RFQ |
1N255 | military specifications | semiconductor device diode | RFQ |
1N1125 | general electric company | semiconductor device diode | RFQ |
1N1125 | military specifications | semiconductor device diode | RFQ |
TM31 | gilbert engineering co inc | semiconductor device diode | RFQ |
MIL-PRF-19500/260 | military specifications | semiconductor device diode | RFQ |
322MT088P001 | raytheon company | semiconductor device diode | RFQ |
JAN1N1126A | military specifications | semiconductor device diode | RFQ |
352250009971 | thales nederland bv | semiconductor device diode | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
AXGY | MOUNTING METHOD | THREADED STUD |
CCDG | OVERALL WIDTH ACROSS FLATS | 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS CASE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
THSD | THREAD SERIES DESIGNATOR | UNF |
TTQY | TERMINAL TYPE AND QUANTITY | 1 TAB,SOLDER LUG AND 1 THREADED STUD |
ABHP | OVERALL LENGTH | 0.405 INCHES MAXIMUM |
AKPV | MOUNTING FACILITY QUANTITY | 1 |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CQJX | NOMINAL THREAD SIZE | 0.190 INCHES |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 500.0 MAXIMUM REVERSE VOLTAGE,INSTANTANEOUS AND 400.0 MAXIMUM REVERSE VOLTAGE,PEAK |
CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 AMPERES MAXIMUM FORWARD CURRENT,DC AND-1.00 AMPERES MAXIMUM DRAIN CURRENT |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/104 GOVERNMENT SPECIFICATION |
Relevant Components for NSN - 5961-00-878-2737, 5961008782737 | ||||
5999-00-616-9061 (5999006169061) | 5950-01-131-6873 (5950011316873) | 5910-01-260-0836 (5910012600836) | 5905-00-819-6428 (5905008196428) | |
5998-00-226-2295 (5998002262295) | 5935-00-201-7480 (5935002017480) | 5950-01-057-5614 (5950010575614) | 5985-01-291-9953 (5985012919953) | |
5999-01-138-1861 (5999011381861) | 5910-00-817-5620 (5910008175620) | 5961-00-810-3955 (5961008103955) | 5935-01-216-0330 (5935012160330) | |
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