| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-847-5508 (008475508) |
| NCB Code | USA (00) |
| Manufacturer | Condor D C Power Supplies Inc, Freescale Semiconductor Inc, Rockwell Collins Inc, Superior Electric Holding Group Llc, N A P Smd Technology Inc, Raytheon Company, Hamilton Sundstrand Corporation, Joint Electron Device Engineering, Tektronix Inc, Ericsson Inc, General Dynamics Corporation, Sypris Electronics Llc, Exelis Inc, Electronic Industries Inc, International Rectifier Corporation, Semicon Components Inc, Lucent Technologies Inc, Joint Electronics Type Designation, Honeywell International Inc, C O D I Corp, Thales Nederland B V, General Electric Company, Microsemi Corp, Litton Systems Inc, Inspektorat Wsparcia Sil Zbrojnych, Solartron Electronics Inc, Qes Ltd, Adelco Elektronik Gmbh |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 4020001 | condor d c power supplies inc | semiconductor device diode | RFQ |
| 1M15Z10 | freescale semiconductor inc | semiconductor device diode | RFQ |
| 353-3054-00 | rockwell collins inc | semiconductor device diode | RFQ |
| 1N3024 | freescale semiconductor inc | semiconductor device diode | RFQ |
| 201670 PC 106 | superior electric holding group llc | semiconductor device diode | RFQ |
| 1N1775 | n a p smd technology inc | semiconductor device diode | RFQ |
| 4178600-91 | raytheon company | semiconductor device diode | RFQ |
| 562267M54 | hamilton sundstrand corporation | semiconductor device diode | RFQ |
| 1N1775A | joint electron device engineering | semiconductor device diode | RFQ |
| 152-0024-00 | tektronix inc | semiconductor device diode | RFQ |
| KS78605B15V | ericsson inc | semiconductor device diode | RFQ |
| 152-126 | tektronix inc | semiconductor device diode | RFQ |
| 1M15Z5 | general dynamics corporation | semiconductor device diode | RFQ |
| 212158-0009 | sypris electronics llc | semiconductor device diode | RFQ |
| 1N3024B | exelis inc | semiconductor device diode | RFQ |
| 1N3024A | electronic industries inc | semiconductor device diode | RFQ |
| 1N3024B | international rectifier corporation | semiconductor device diode | RFQ |
| 1R15A | semicon components inc | semiconductor device diode | RFQ |
| 212158-0009 | lucent technologies inc | semiconductor device diode | RFQ |
| 202642 PC 106 | superior electric holding group llc | semiconductor device diode | RFQ |
| 1N3024B | joint electronics type designation | semiconductor device diode | RFQ |
| 1N3024B | joint electron device engineering | semiconductor device diode | RFQ |
| 78500989 | ericsson inc | semiconductor device diode | RFQ |
| 2586109-109 | honeywell international inc | semiconductor device diode | RFQ |
| 1N3024B | c o d i corp | semiconductor device diode | RFQ |
| VBE890-1N3024B | thales nederland b v | semiconductor device diode | RFQ |
| 1N30248 | freescale semiconductor inc | semiconductor device diode | RFQ |
| 1N3024B | electronic industries inc | semiconductor device diode | RFQ |
| 353-1319-000 | rockwell collins inc | semiconductor device diode | RFQ |
| 353-0054-000 | rockwell collins inc | semiconductor device diode | RFQ |
| 1N3024 | general electric company | semiconductor device diode | RFQ |
| 1N3024B | microsemi corp | semiconductor device diode | RFQ |
| 947179-242 | litton systems inc | semiconductor device diode | RFQ |
| 352250010086 | thales nederland b v | semiconductor device diode | RFQ |
| 5961PL0937078 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | RFQ |
| 263261-001 | solartron electronics inc | semiconductor device diode | RFQ |
| 4178600-091 | raytheon company | semiconductor device diode | RFQ |
| 864059 1 | qes ltd | semiconductor device diode | RFQ |
| JAN1N3024BA | adelco elektronik gmbh | semiconductor device diode | RFQ |
| 353-3054-000 | rockwell collins inc | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.371 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 15.0 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0/+5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 17.00 MILLIAMPERES SOURCE CUTOFF CURRENT HORSEPOWER METRIC AND 63.00 MILLIAMPERES REPETITIVE PEAK FORWARD CURRENT NOMINAL |
| Relevant Components for NSN - 5961-00-847-5508, 5961008475508 | ||||
| 5999-99-998-9189 (5999999989189) | 5999-99-998-9107 (5999999989107) | 5999-99-998-5103 (5999999985103) | 5999-99-987-4989 (5999999874989) | |
| 5999-99-980-1679 (5999999801679) | 5999-99-973-6520 (5999999736520) | 5999-99-971-5510 (5999999715510) | 5999-99-968-5252 (5999999685252) | |
| 5999-99-958-3895 (5999999583895) | 5999-99-954-8789 (5999999548789) | 5999-99-948-2658 (5999999482658) | 5999-99-946-0997 (5999999460997) | |
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