We appreciate your interest in our selection of parts that fall under the NSN 5961-00-702-3435. Below, top-requested part numbers like 1N3600, 13E13600-003, 353-9008-011, 5961PL0808033, JAN1N3600, and others are presented alongside their manufacturer for your perusal. In order to receive pricing options on any featured NSN 5961-00-702-3435, simply click on the “RFQ” button next to it and complete the quote request form you are directed to. Be sure to include as many details as you can about your requirements and restrictions alike so our team can best formulate ideal fulfillment options for your consideration.
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Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 00-702-3435 (007023435) |
NCB Code | USA (00) |
Manufacturer | Eck And Krebs Scientific Laboratory, General Dynamics Mission Systems, Rockwell Collins Aerospace, Inspektorat Wsparcia Sil Zbrojnych, Joint Army-Navy Specifications, Raytheon Company, Adelco Elektronik Gmbh, Thales Defense And Security Inc, Itt Telecom Products Corp, Northern Telecom Systems Corp, Litton Systems Inc, Electronic Industries Inc, Military Specifications, Fairchild Semiconductor Corp, Lockheed Martin Corporation, Thales Nederland Bv, Airbus Defence And Space Limited, Texas Instruments Inc, Computer Consoles Inc |
Part Number | Manufacturer | Item Name | RFQ |
---|---|---|---|
1N3600 | eck and krebs scientific laboratory | semiconductor device diode | RFQ |
13E13600-003 | general dynamics mission systems | semiconductor device diode | RFQ |
353-9008-011 | rockwell collins aerospace | semiconductor device diode | RFQ |
5961PL0808033 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | RFQ |
JAN1N3600 | joint army-navy specifications | semiconductor device diode | RFQ |
908705-1 | raytheon company | semiconductor device diode | RFQ |
JAN1N3600A | adelco elektronik gmbh | semiconductor device diode | RFQ |
848060-0001 | thales defense and security inc | semiconductor device diode | RFQ |
106681 | itt telecom products corp | semiconductor device diode | RFQ |
752-6394 | northern telecom systems corp | semiconductor device diode | RFQ |
947179-600 | litton systems inc | semiconductor device diode | RFQ |
1N3600 | joint army-navy specifications | semiconductor device diode | RFQ |
947179-6000 | litton systems inc | semiconductor device diode | RFQ |
1N3600A29 | electronic industries inc | semiconductor device diode | RFQ |
947099-6000 | litton systems inc | semiconductor device diode | RFQ |
JAN1N3600 | military specifications | semiconductor device diode | RFQ |
FD6529 | fairchild semiconductor corp | semiconductor device diode | RFQ |
MIL-PRF-19500/231 | military specifications | semiconductor device diode | RFQ |
4178600-341 | raytheon company | semiconductor device diode | RFQ |
7900106-00 | lockheed martin corporation | semiconductor device diode | RFQ |
SSNIN3600 | military specifications | semiconductor device diode | RFQ |
VBE890-1N3600 | thales nederland bv | semiconductor device diode | RFQ |
5800583-926201.205 | airbus defence and space limited | semiconductor device diode | RFQ |
352250010124 | thales nederland bv | semiconductor device diode | RFQ |
1N3600 | texas instruments inc | semiconductor device diode | RFQ |
1N3600 | military specifications | semiconductor device diode | RFQ |
107X00026 | computer consoles inc | semiconductor device diode | RFQ |
USN1N3600 | military specifications | semiconductor device diode | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
ADAV | OVERALL DIAMETER | 0.056 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 75.0 MAXIMUM BREAKDOWN VOLTAGE,DC AND 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 4.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
MATT | MATERIAL | GLASS INCLOSURE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLEC |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-PRF-19500/231 GOVERNMENT SPECIFICATION |
Relevant Components for NSN - 5961-00-702-3435, 5961007023435 | ||||
5975-01-488-1039 (5975014881039) | 5905-00-280-1812 (5905002801812) | 5975-00-073-4207 (5975000734207) | 5905-01-127-2056 (5905011272056) | |
5930-01-455-1402 (5930014551402) | 5905-01-261-3683 (5905012613683) | 5998-01-177-7709 (5998011777709) | 5998-01-217-6701 (5998012176701) | |
5940-01-064-0053 (5940010640053) | 5998-01-529-8918 (5998015298918) | 5935-01-479-6289 (5935014796289) | 5905-01-320-8479 (5905013208479) | |
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