| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-460-0981 (004600981) |
| NCB Code | USA (00) |
| Manufacturer | International Rectifier Corporation, Electronic Industries Inc, Freescale Semiconductor Inc, Joint Electron Device Engineering, Riimic Llc, Rosemount Analytical Inc, Raytheon Company, Thales Usa Inc, Inspektorat Wsparcia Sil Zbrojnych, Itt Federal Laboratories Div Of |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 1Z10T5 | international rectifier corporation | semiconductor device diode | RFQ |
| 1N3020B | electronic industries inc | semiconductor device diode | RFQ |
| 1N30208 | freescale semiconductor inc | semiconductor device diode | RFQ |
| 1N3020A | joint electron device engineering | semiconductor device diode | RFQ |
| 0403850002 | riimic llc | semiconductor device diode | RFQ |
| 1N3020B | rosemount analytical inc | semiconductor device diode | RFQ |
| 1N3020B | raytheon company | semiconductor device diode | RFQ |
| 1N1512 | international rectifier corporation | semiconductor device diode | RFQ |
| 1N3020B | international rectifier corporation | semiconductor device diode | RFQ |
| 848142-9101 | thales usa inc | semiconductor device diode | RFQ |
| 5961PL1277655 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | RFQ |
| 1N3020B | joint electron device engineering | semiconductor device diode | RFQ |
| 705000H130 | itt federal laboratories div of | semiconductor device diode | RFQ |
| 531543-5 | raytheon company | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 10.0 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0/+5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 25.00 MILLIAMPERES ALL PRIMARIES HORSEPOWER METRIC AND 95.00 MILLIAMPERES REPETITIVE PEAK FORWARD CURRENT NOMINAL |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLEC |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/115 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-00-460-0981, 5961004600981 | ||||
| 5999-99-998-9189 (5999999989189) | 5999-99-998-9107 (5999999989107) | 5999-99-998-5103 (5999999985103) | 5999-99-987-4989 (5999999874989) | |
| 5999-99-980-1679 (5999999801679) | 5999-99-973-6520 (5999999736520) | 5999-99-971-5510 (5999999715510) | 5999-99-968-5252 (5999999685252) | |
| 5999-99-958-3895 (5999999583895) | 5999-99-954-8789 (5999999548789) | 5999-99-948-2658 (5999999482658) | 5999-99-946-0997 (5999999460997) | |
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