We appreciate your interest in our selection of parts that fall under the NSN 5961-00-062-0208. Below, top-requested part numbers like 1N823AA, 1N823A, 013-625, 99194385, F00001-12, and others are presented alongside their manufacturer for your perusal. In order to receive pricing options on any featured NSN 5961-00-062-0208, simply click on the “RFQ” button next to it and complete the quote request form you are directed to. Be sure to include as many details as you can about your requirements and restrictions alike so our team can best formulate ideal fulfillment options for your consideration.
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Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 00-062-0208 (000620208) |
NCB Code | USA (00) |
Manufacturer | Adelco Elektronik Gmbh, Military Specifications, Trw Electronic Components, Ampex Systems Corp, Electronic Industries Inc, Thales Sa, Telcom Semiconductor Inc, Raytheon Company, C O D I Corp, Freescale Semiconductor Inc, Harris Corporation, Gilbert Engineering Co Inc, International Diode Corp, Tdk Lambda Ltd, Beacon Industries Inc, Microsemi Corporation, Western Semiconductors Div, Digitec Corp, Spx Corporation, Silicon Transistor Corp, Wavetek U S Inc, Trw Limited, Hekimian Laboratories Inc, Slater Electric Inc |
Part Number | Manufacturer | Item Name | RFQ |
---|---|---|---|
1N823AA | adelco elektronik gmbh | semiconductor device diode | RFQ |
1N823A | military specifications | semiconductor device diode | RFQ |
1N823A | trw electronic components | semiconductor device diode | RFQ |
013-625 | ampex systems corp | semiconductor device diode | RFQ |
1N823A | electronic industries inc | semiconductor device diode | RFQ |
99194385 | thales sa | semiconductor device diode | RFQ |
1N823A | telcom semiconductor inc | semiconductor device diode | RFQ |
F00001-12 | raytheon company | semiconductor device diode | RFQ |
1N823A | c o d i corp | semiconductor device diode | RFQ |
1N823A | freescale semiconductor inc | semiconductor device diode | RFQ |
131034-001 | harris corporation | semiconductor device diode | RFQ |
1N823A | gilbert engineering co inc | semiconductor device diode | RFQ |
1N823A | international diode corp | semiconductor device diode | RFQ |
1N823A | ampex systems corp | semiconductor device diode | RFQ |
66003004 | tdk lambda ltd | semiconductor device diode | RFQ |
Q531784312 | beacon industries inc | semiconductor device diode | RFQ |
1N823A | microsemi corporation | semiconductor device diode | RFQ |
1N823A | western semiconductors div | semiconductor device diode | RFQ |
RELEASE 3109 | electronic industries inc | semiconductor device diode | RFQ |
1N823A | raytheon company | semiconductor device diode | RFQ |
05010000 | digitec corp | semiconductor device diode | RFQ |
530160-2 | raytheon company | semiconductor device diode | RFQ |
9005-4-1 | spx corporation | semiconductor device diode | RFQ |
1N823A | silicon transistor corp | semiconductor device diode | RFQ |
4801-01-0823 | wavetek u s inc | semiconductor device diode | RFQ |
1N823A | trw limited | semiconductor device diode | RFQ |
03C00823A | hekimian laboratories inc | semiconductor device diode | RFQ |
1N823A | slater electric inc | semiconductor device diode | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
AFZC | FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-7 |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE |
CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 7.50 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT |
CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR |
MATT | MATERIAL | GLASS INCLOSURE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
Relevant Components for NSN - 5961-00-062-0208, 5961000620208 | ||||
5999-01-613-6399 (5999016136399) | 5910-00-519-6671 (5910005196671) | 5930-01-202-2454 (5930012022454) | 5961-01-014-0524 (5961010140524) | |
5998-01-428-5842 (5998014285842) | 5935-01-255-0232 (5935012550232) | 5999-01-054-5566 (5999010545566) | 5935-01-572-2077 (5935015722077) | |
5950-00-080-2509 (5950000802509) | 5977-00-245-2041 (5977002452041) | 5998-01-506-6190 (5998015066190) | 5996-01-451-1980 (5996014511980) | |
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